Record low contact resistivity on Ga-doped Ge source/drain contacts for pMOS transistors

05.12. 2017 Semiconductor Technology News - Semiconductor News, Semiconductors, Semiconductor Technology

At this week's 2017 International Electron Devices Meeting (IEDM), imec, the world-leading research and innovation hub in nanoelectronics and digital technology, reports ultralow contact resistivity of 5x10-10Ωcm2 on Gallium (Ga)-doped p-Germanium (Ge) source/drain contacts. The low contact resistivity and high level of Ga activation were achieved after nanosecond laser activation (NLA) at low thermal budget. The results show that highly Ga-doped Ge-rich source/drain contacts provide a promising route for suppressing parasitic source/drain resistance in advanced pMOS devices.

Functional ring oscillators based on stacked gate-all-around silicon nanowire transistors

05.12. 2017 Semiconductor Technology News - Semiconductor News, Semiconductors, Semiconductor Technology

At this week's 2017 International Electron Devices Meeting (IEDM), imec, the research and innovation hub in nano-electronics and digital technology, reports on multiple key process optimizations for vertically stacked gate-all-around (GAA) silicon nanowire transistors. The optimized CMOS process flow was then used to integrate, for the first time, the GAA nanowire transistors in a functional ring oscillator. This demonstrator shows the enormous promise this technology holds for realizing the sub-5nm technology nodes.

One big wire change from 1997 still helping chips achieve tiny scale

15.11. 2017 Semiconductor Technology News - Semiconductor News, Semiconductors, Semiconductor Technology

The IT state-of-the-art 20 years ago was rapidly ending, and we – and I mean everyone in the industry that made a device with a chip inside of it – needed something new to keep up with the demand for ever-faster, better electronics. These were the days of laptops with 233 MHz speeds, and Deep Blue was exploring a mere 200 million possible chess positions per second. Without one element in the eleventh group of the periodic table, Cu, our computers and devices would not have advanced much beyond the speed and power of two decades ago.

Researchers create gallium nitride semiconductors doped with beryllium

10.11. 2017 Semiconductor Technology News - Semiconductor News, Semiconductors, Semiconductor Technology

Physicists at Aalto University have discovered a microscopic mechanism that will allow gallium nitride semiconductors to be used in electronic devices that distribute large amounts of electric power.

Transfer technique produces wearable gallium nitride gas sensors

09.11. 2017 Semiconductor Technology News - Semiconductor News, Semiconductors, Semiconductor Technology

A transfer technique based on thin sacrificial layers of boron nitride could allow high-performance gallium nitride gas sensors to be grown on sapphire substrates and then transferred to metallic or flexible polymer support materials. The technique could facilitate the production of low-cost wearable, mobile and disposable sensing devices for a wide range of environmental applications.

Highly flexible organic flash memory for foldable and disposable electronics

07.11. 2017 Semiconductor Technology News - Semiconductor News, Semiconductors, Semiconductor Technology

A KAIST team reported ultra-flexible organic flash memory that is bendable down to a radius of 300 μm. The memory exhibits a significantly-long projected retention rate with a programming voltage on par with the present industrial standards.

Intel presents 17-qubit superconducting chip with advanced packaging

11.10. 2017 Semiconductor Technology News - Semiconductor News, Semiconductors, Semiconductor Technology

Today, Intel announced the delivery of a 17-qubit superconducting test chip for quantum computing to QuTech, Intel's quantum research partner in the Netherlands. The new chip was fabricated by Intel and features a unique design to achieve improved yield and performance.

Advanced molybdenum selenide near infrared phototransistors

27.09. 2017 Semiconductor Technology News - Semiconductor News, Semiconductors, Semiconductor Technology

Optical sensors operating in the near infrared (NIR) are important for applications in imaging, photodetectors, and biological sensors. Notably, recent reports on the synthesis of high quality, large areas of graphene has motivated researchers to search for other 2-D materials with properties suitable for NIR devices.

Application of air-sensitive semiconductors in nanoelectronics

22.09. 2017 Semiconductor Technology News - Semiconductor News, Semiconductors, Semiconductor Technology

A research group consisting of scientists from Tomsk Polytechnic University, Germany and Venezuela proved the existence of chemical bonds between gallium and oxygen. This discovery will allow manufacturing superconducting nanoelectronics based on gallium selenide, which has never been achieved by any research team in the world. The study was published in Semiconductor Science and Technology.

Beat the heat in 3-D chip stacks with ICECool

30.08. 2017 Semiconductor Technology News - Semiconductor News, Semiconductors, Semiconductor Technology

In the Moore's Law race to keep improving computer performance, the IT industry has turned upward, stacking chips like nano-sized 3-D skyscrapers. But those stacks, like the law it's challenging, have their limits, due to overheating. So, our team in New York, alongside colleagues in Zurich, received a 2013 contract to tackle intra-chip cooling from the Defense Advanced Research Projects Agency (DARPA) in its ICECool program. For our part, we developed a new cooling technology to overcome the thermal barrier of stacking chips, an on-chip solution that could help to even cool off entire datacenters.

World’s highest output density with power amplifier for W-band GaN transmitters

24.07. 2017 Semiconductor Technology News - Semiconductor News, Semiconductors, Semiconductor Technology

Fujitsu today announced the development of a gallium-nitride (GaN) high-electron mobility transistor (HEMT) power amplifier for use in W-band (75-110 GHz) transmissions. To realize long-distance, high-capacity wireless communications, a promising approach is to utilize the W-band and other high frequency bands that encompass a broad range of usable frequencies, and increase output with a transmission power amplifier. At the same time, demand exists for improved efficiency in power amplifiers in order to mitigate the increased power consumption of communication systems. Fujitsu has now succeeded in developing a power amplifier for use in W-band transmissions that offers both high output power and high efficiency, improving transistor performance through the reduction of electrical current leakage and internal GaN-HEMT resistance.

Nitrades in transition

08.06. 2017 Semiconductor Technology News - Semiconductor News, Semiconductors, Semiconductor Technology

The average, everyday person might not be familiar with gallium nitride, also known as GaN, but there is a good chance they've heard of silicon, a semiconductor that's been used for decades and found in every computer and most electronics.

Breakthrough in CMOS-compatible ferroelectric memory

07.06. 2017 Semiconductor Technology News - Semiconductor News, Semiconductors, Semiconductor Technology

Imec, the world-leading research and innovation hub in nanoelectronics and digital technology, announced today at the 2017 Symposia on VLSI Technology and Circuits the world's first demonstration of a vertically stacked ferroelectric Al doped HfO2 device for NAND applications. Using a new material and a novel architecture, imec has created a non-volatile memory concept with attractive characteristics for power consumption, switching speed, scalability and retention. The achievement shows that ferro-electric memory is a highly promising technology at various points in the memory hierarchy, and as a new technology for storage class memory. Imec will further develop the concept in collaboration with the world's leading producers of memory ICs.

A solution for precise, low-cost eye movement detection

19.05. 2017 Semiconductor Technology News - Semiconductor News, Semiconductors, Semiconductor Technology

Imec and Holst Centre (set up by imec and TNO) today announced the development of a sensing technology to detect eye movement in real time based on electrical sensing. Paving the way for the next generation of eye-tracking technology, imec's solution has promising applications in the fields of virtual and augmented reality.

Self-learning neuromorphic chip that composes music

16.05. 2017 Semiconductor Technology News - Semiconductor News, Semiconductors, Semiconductor Technology

Today, at the imec technology forum (ITF2017), imec demonstrated the world's first self-learning neuromorphic chip. The brain-inspired chip, based on OxRAM technology, has the capability of self-learning and has been demonstrated to have the ability to compose music.