High-sensitivity low-power MEMS accelerometer for detecting extremely weak ground and building vibrations

16.02. 2018 Semiconductor Technology News - Semiconductor News, Semiconductors, Semiconductor Technology

Hitachi Ltd. today announced the development of a high-sensitivity low-power MEMS accelerometer that can detect extremely weak ground and building vibrations by combining sophisticated MEMS technology with circuit technology. The sensor achieves a comparable sensitivity to that of sensors for oil & gas exploration (noise level 30ng/√Hz) with less than half the power consumption (20mW). Hitachi intends to apply this sensor to various applications including next generation oil & gas exploration, and infrastructure monitoring, to contribute to the realization of a comfortable, safe and secure society.

Identifying structural defects during driving electronic devices

19.01. 2018 Semiconductor Technology News - Semiconductor News, Semiconductors, Semiconductor Technology

A research team from Korea has discovered the blocking phenomenon of electrons generated during high-speed driving of oxide semiconductors and proved its causes for the first time in the world. It is expected to be used for the commercialization of next-generation intelligent electronic devices.

Gallium nitride processor—next-generation technology for space exploration

28.12. 2017 Semiconductor Technology News - Semiconductor News, Semiconductors, Semiconductor Technology

A material known as gallium nitride (GaN), poised to become the next semiconductor for power electronics, could be also essential for various space applications. Yuji Zhao, an expert in electrical and computer engineering at Arizona State University (ASU), plans to develop the first-ever processor from gallium nitride, which could revolutionize future space exploration missions.

Gallium nitride processor—next-generation technology for space exploration

28.12. 2017 Semiconductor Technology News - Semiconductor News, Semiconductors, Semiconductor Technology

A material known as gallium nitride (GaN), poised to become the next semiconductor for power electronics, could be also essential for various space applications. Yuji Zhao, an expert in electrical and computer engineering at Arizona State University (ASU), plans to develop the first-ever processor from gallium nitride, which could revolutionize future space exploration missions.

Samsung now mass-producing industry’s first 2nd-generation, 10-nanometer class DRAM

21.12. 2017 Semiconductor Technology News - Semiconductor News, Semiconductors, Semiconductor Technology

Samsung Electronics announced today that it has begun mass producing the industry's first 2nd-generation of 10-nanometer class (1y-nm), 8-gigabit (Gb) DDR4 DRAM. For use in a wide range of next-generation computing systems, the new 8Gb DDR4 features the highest performance and energy efficiency for an 8Gb DRAM chip, as well as the smallest dimensions.

Fully screen-printed monoPoly silicon solar cell technology

14.12. 2017 Semiconductor Technology News - Semiconductor News, Semiconductors, Semiconductor Technology

The Solar Energy Research Institute of Singapore (SERIS) at the National University of Singapore (NUS) has reached a new cell efficiency milestone in the development of its low-cost screen-printed bifacial monoPoly silicon solar cell technology, recording an average cell efficiency of 21.5% in pilot-scale production using commercially available large-area Cz-Si wafers.

Fully screen-printed monoPoly silicon solar cell technology

14.12. 2017 Semiconductor Technology News - Semiconductor News, Semiconductors, Semiconductor Technology

The Solar Energy Research Institute of Singapore (SERIS) at the National University of Singapore (NUS) has reached a new cell efficiency milestone in the development of its low-cost screen-printed bifacial monoPoly silicon solar cell technology, recording an average cell efficiency of 21.5% in pilot-scale production using commercially available large-area Cz-Si wafers.

Record low contact resistivity on Ga-doped Ge source/drain contacts for pMOS transistors

05.12. 2017 Semiconductor Technology News - Semiconductor News, Semiconductors, Semiconductor Technology

At this week's 2017 International Electron Devices Meeting (IEDM), imec, the world-leading research and innovation hub in nanoelectronics and digital technology, reports ultralow contact resistivity of 5x10-10Ωcm2 on Gallium (Ga)-doped p-Germanium (Ge) source/drain contacts. The low contact resistivity and high level of Ga activation were achieved after nanosecond laser activation (NLA) at low thermal budget. The results show that highly Ga-doped Ge-rich source/drain contacts provide a promising route for suppressing parasitic source/drain resistance in advanced pMOS devices.

Functional ring oscillators based on stacked gate-all-around silicon nanowire transistors

05.12. 2017 Semiconductor Technology News - Semiconductor News, Semiconductors, Semiconductor Technology

At this week's 2017 International Electron Devices Meeting (IEDM), imec, the research and innovation hub in nano-electronics and digital technology, reports on multiple key process optimizations for vertically stacked gate-all-around (GAA) silicon nanowire transistors. The optimized CMOS process flow was then used to integrate, for the first time, the GAA nanowire transistors in a functional ring oscillator. This demonstrator shows the enormous promise this technology holds for realizing the sub-5nm technology nodes.

One big wire change from 1997 still helping chips achieve tiny scale

15.11. 2017 Semiconductor Technology News - Semiconductor News, Semiconductors, Semiconductor Technology

The IT state-of-the-art 20 years ago was rapidly ending, and we – and I mean everyone in the industry that made a device with a chip inside of it – needed something new to keep up with the demand for ever-faster, better electronics. These were the days of laptops with 233 MHz speeds, and Deep Blue was exploring a mere 200 million possible chess positions per second. Without one element in the eleventh group of the periodic table, Cu, our computers and devices would not have advanced much beyond the speed and power of two decades ago.

Researchers create gallium nitride semiconductors doped with beryllium

10.11. 2017 Semiconductor Technology News - Semiconductor News, Semiconductors, Semiconductor Technology

Physicists at Aalto University have discovered a microscopic mechanism that will allow gallium nitride semiconductors to be used in electronic devices that distribute large amounts of electric power.

Transfer technique produces wearable gallium nitride gas sensors

09.11. 2017 Semiconductor Technology News - Semiconductor News, Semiconductors, Semiconductor Technology

A transfer technique based on thin sacrificial layers of boron nitride could allow high-performance gallium nitride gas sensors to be grown on sapphire substrates and then transferred to metallic or flexible polymer support materials. The technique could facilitate the production of low-cost wearable, mobile and disposable sensing devices for a wide range of environmental applications.

Highly flexible organic flash memory for foldable and disposable electronics

07.11. 2017 Semiconductor Technology News - Semiconductor News, Semiconductors, Semiconductor Technology

A KAIST team reported ultra-flexible organic flash memory that is bendable down to a radius of 300 μm. The memory exhibits a significantly-long projected retention rate with a programming voltage on par with the present industrial standards.

Intel presents 17-qubit superconducting chip with advanced packaging

11.10. 2017 Semiconductor Technology News - Semiconductor News, Semiconductors, Semiconductor Technology

Today, Intel announced the delivery of a 17-qubit superconducting test chip for quantum computing to QuTech, Intel's quantum research partner in the Netherlands. The new chip was fabricated by Intel and features a unique design to achieve improved yield and performance.

Advanced molybdenum selenide near infrared phototransistors

27.09. 2017 Semiconductor Technology News - Semiconductor News, Semiconductors, Semiconductor Technology

Optical sensors operating in the near infrared (NIR) are important for applications in imaging, photodetectors, and biological sensors. Notably, recent reports on the synthesis of high quality, large areas of graphene has motivated researchers to search for other 2-D materials with properties suitable for NIR devices.